Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
(a) Cross-sectional schematic diagram of the 4H-SiC p–i–n APD. (b) The top view image of one fabricated SiC APD.
Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses |
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(a) Cross-sectional schematic diagram of the 4H-SiC p–i–n APD. (b) The top view image of one fabricated SiC APD. |
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