The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells
Bao Jianhui
1, 2
, Tao Ke
2, †
, Lin Yiren
1
, Jia Rui
2, ‡
, Liu Aimin
3, §
EQE data of IBC-SHJ with n
+
-a-Si: H thin films of different band gaps.