The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells
Bao Jianhui
1, 2
, Tao Ke
2, †
, Lin Yiren
1
, Jia Rui
2, ‡
, Liu Aimin
3, §
Doping concentrations of n
+
-a-Si: H and p
+
-a-Si: H thin films on the back of IBC-SHJ solar cells.