Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well
Li Yi, Zhu Youhua †, Wang Meiyu, Deng Honghai, Yin Haihong
       

(a) The TE polarization total spontaneous emission rate ( R sp ) and (b) polarization ratio as a function of peak wavelength for the InxAl1−xN–AlGaN/Al0.74Ga0.26N QW structures ( x = 0.13 , 0.15, 0.17, 0.2, 0.23) and the conventional structure at the current density of 100 A/cm2.