Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well
Li Yi, Zhu Youhua †, Wang Meiyu, Deng Honghai, Yin Haihong
       

(a) TE-polarized and (b) TM-polarized optical matrix elements and (c) f c n ( 1 − f v U m ) at the Γ point for the InxAl1−xN–Al0.59Ga0.41N/Al0.74Ga0.26N QW structures with different In-contents.