Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well
Li Yi, Zhu Youhua †, Wang Meiyu, Deng Honghai, Yin Haihong
       

(a) TE-polarized optical matrix elements ( | M x | 2 ), (b) TM-polarized optical matrix elements ( | M z | 2 ), and (c) the product of Fermi–Dirac distribution functions of electron and hole as a function of the in-plane wave vector kt for the In0.15Al0.85N–Al0.59Ga0.41N/Al0.74Ga0.26N QW structure and the conventional structure.