Improvement of TE-polarized emission in type-II InAlN

Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well

Li Yi, Zhu Youhua^†, Wang Meiyu, Deng Honghai, Yin Haihong

(a) TE polarization and (b) TM polarization spontaneous emission spectra of the In_xAl_1−xN–Al_0.59Ga_0.41N/Al_0.74Ga_0.26N QW structures and the conventional Al_0.59Ga_0.41N/Al_0.74Ga_0.26N QW structure at the injection current density of 100 A/cm².