Improvement of TE-polarized emission in type-II InAlN

Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well

Li Yi, Zhu Youhua^†, Wang Meiyu, Deng Honghai, Yin Haihong

(a) The calculated valence band offsets and conduction band offsets of In_xAl_1−xN/Al_0.59Ga_0.41N and (b) the potential profile of the In_xAl_1−xN–Al_0.59Ga_0.41N/Al_0.74Ga_0.26N single quantum well structure. The single quantum well structure is shown in the inset.