(a) Magnetic-field (H) dependence of electric voltage (V) generated in YIG/CoO (3 nm)/Pt trilayer film at various temperatures. V_ISHE denotes the voltage signal in the ferromagnetic resonance field. (b) Temperature dependence of V_ISHE for the YIG/Pt bilayer film. (c) Temperature dependence of V_ISHE for the YIG/CoO (3, 6, 10 nm)/Pt trilayer devices. (d) Temperature dependence of spin pumping signal V_SP and spin Seebeck signal V_SSE for the YIG/NiO (1.5 nm)/Pt trilayer devices.