Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-<inline-formula> <tex-math> <?CDATA ${\rm{\mu }}{\rm{m}}$?> </tex-math> <mml:math> <mml:mi mathvariant="normal">μ</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:math> <inline-graphic xmlns:xlink="https://www.w3.org/1999/xlink" xlink:href="cpb_28_8_088501_ieqn1.gif"/> </inline-formula> BCD process

Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-

μ m

BCD process

Hou Fei¹, Chen Ruibo², Du Feibo¹, Liu Jizhi¹, Liu Zhiwei^{1, †}, J Liou Juin²

TCAD simulation results of the impact ionization distributions in (a) conventional GGNMOS and (b) proposed PB-NMOS_type1.