Study on the nitridation of β-Ga2O3 films
Cheng Fei1, Li Yue-Wen1, Zhao Hong1, †, Xiu Xiang-Qian1, 2, ‡, Jia Zhi-Tai2, Liu Duo2, Hua Xue-Mei1, Xie Zi-Li1, Tao Tao1, Chen Peng1, Liu Bin1, Zhang Rong1, §, Zheng You-Dou1
       

XRD patterns of β-Ga2O3 films after nitridation at 1050 °C for different times (a). The XRC patterns of GaN (002) and (102) formed at 1050 °C for different times (b).