Study on the nitridation of β-Ga2O3 films
Cheng Fei1, Li Yue-Wen1, Zhao Hong1, †, Xiu Xiang-Qian1, 2, ‡, Jia Zhi-Tai2, Liu Duo2, Hua Xue-Mei1, Xie Zi-Li1, Tao Tao1, Chen Peng1, Liu Bin1, Zhang Rong1, §, Zheng You-Dou1
       

Raman spectra of β-Ga2O3 film and the samples after nitridation at different temperatures for 0.5 h (a) and the curve of Raman peak intensity of the Ga2O3-A3g mode and the GaN-E2 (high) mode with the nitridation temperature (b).