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) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Wang Qi^{1, 2}, Yuan Guo-Dong^{1, 2, †}, Liu Wen-Qiang^{1, 2}, Zhao Shuai^{1, 2}, Zhang Lu^{1, 2}, Liu Zhi-Qiang^{1, 2}, Wang Jun-Xi^{1, 2}, Li Jin-Min^{1, 2}

(a) SEM images of single stripe from the center (a) to the side (e). Monochromatic CL mapping images at wavelengths of (b) 450 nm and (c) 560 nm. (d) Normalized emission intensity from points A–E in panel (a).