Monolithic semi-polar (<inline-formula> <tex-math> <?CDATA $1\bar{1}01$?> </tex-math><mml:math> <mml:mn>1</mml:mn> <mml:mover accent="true"> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> <mml:mrow> <mml:mo>¯</mml:mo> </mml:mrow> </mml:mover> <mml:mn>01</mml:mn> </mml:math> <inline-graphic xmlns:xlink="https://www.w3.org/1999/xlink" xlink:href="cpb_28_8_087802_ieqn1.gif"/> </inline-formula>) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Monolithic semi-polar (

1 1 ¯ 01

) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Wang Qi^{1, 2}, Yuan Guo-Dong^{1, 2, †}, Liu Wen-Qiang^{1, 2}, Zhao Shuai^{1, 2}, Zhang Lu^{1, 2}, Liu Zhi-Qiang^{1, 2}, Wang Jun-Xi^{1, 2}, Li Jin-Min^{1, 2}

(a) and (b) High-magnification cross-sectional TEM images of MQW portion, which corresponds to different parts (red squares) of panel (c). (c) TEM of MQWs portion revealing individual InGaN/GaN QWs. Dashed lines indicate the boundaries of the MQWs. (d) TEM-EDX lines scanning in direction perpendicular to QW: Line a and line b representing the center and the side of the stripe, respectively.