Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO<sub>3</sub>/Nb:SrTiO<sub>3</sub> junctions

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO₃/Nb:SrTiO₃ junctions

Wang Zhi-Cheng¹, Cui Zhang-Zhang^{2, 3, †}, Xu Hui¹, Zhai Xiao-Fang^{1, 3}, Lu Ya-Lin^{1, 2, 3, ‡}

(a) Sketch of Schottky barrier height of SRO/Nb:STO system. (b) Fitting of ∣ I ∣ –V data measured at 20 K to thermionic emission equation for SRO/Nb:STO heterostructures. (c) Temperature dependence of Schottky barrier heights of the SRO/Nb:STO heterostructures.