Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO<sub>3</sub>/Nb:SrTiO<sub>3</sub> junctions

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO₃/Nb:SrTiO₃ junctions

Wang Zhi-Cheng¹, Cui Zhang-Zhang^{2, 3, †}, Xu Hui¹, Zhai Xiao-Fang^{1, 3}, Lu Ya-Lin^{1, 2, 3, ‡}

(a) Ru M-edge and (b) O K-edge XAS spectra of SRO films. (c) Magnified Ru 4d t_2g absorption peaks in the O K-edge XAS spectra of SRO films. All the XAS spectra are normalized to the incoming photon flux and the post-edge intensity.