Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO<sub>3</sub>/Nb:SrTiO<sub>3</sub> junctions

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO₃/Nb:SrTiO₃ junctions

Wang Zhi-Cheng¹, Cui Zhang-Zhang^{2, 3, †}, Xu Hui¹, Zhai Xiao-Fang^{1, 3}, Lu Ya-Lin^{1, 2, 3, ‡}

(a) Device geometry of SRO/Nb:STO heterostructure. A DC voltage is applied across the film and substrate. (b)–(e) Temperature-dependent current (I)–volatge (V) characteristics of the SRO/Nb:STO heterostructures measured at temperatures ranging from 300 K to 20 K. Up arrow and down arrow indicate voltage sweep direction. (f) Ratios of HRS current to LRS current (I_LRS/I_HRS) at 20 K calculated from panels (b)–(e).