Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO<sub>3</sub>/Nb:SrTiO<sub>3</sub> junctions

Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO₃/Nb:SrTiO₃ junctions

Wang Zhi-Cheng¹, Cui Zhang-Zhang^{2, 3, †}, Xu Hui¹, Zhai Xiao-Fang^{1, 3}, Lu Ya-Lin^{1, 2, 3, ‡}

(a) XRD ω − 2 θ scans of SRO/Nb:STO heterostructures, and (b) out-of-plane lattice constants of SRO films calculated from the XRD SRO (001) and (002) peaks. The red point represents the SRO film grown at 5 Pa and 1.5 J/cm².