Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
Huo Wenxing1, 2, Mei Zengxia1, †, Lu Yicheng3, Han Zuyin1, 2, Zhu Rui1, 2, Wang Tao1, 2, Sui Yanxin1, 2, Liang Huili1, Du Xiaolong1, 4, ‡
       

Evolution of the transfer characteristics of IGZO TFTs for (a) 2+30, (b) 3+30, (c) 4+30, and (d) 5+30.