Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo Wenxing^{1, 2}, Mei Zengxia^{1, †}, Lu Yicheng³, Han Zuyin^{1, 2}, Zhu Rui^{1, 2}, Wang Tao^{1, 2}, Sui Yanxin^{1, 2}, Liang Huili¹, Du Xiaolong^{1, 4, ‡}

Transfer characteristics for IGZO TFTs with different thicknesses of high-R layers: (a) 4+15, (b) 4+30, (c) 4+45, and (d) 4+60.