Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo Wenxing^{1, 2}, Mei Zengxia^{1, †}, Lu Yicheng³, Han Zuyin^{1, 2}, Zhu Rui^{1, 2}, Wang Tao^{1, 2}, Sui Yanxin^{1, 2}, Liang Huili¹, Du Xiaolong^{1, 4, ‡}

Transfer characteristics for IGZO TFTs with different thicknesses of low-R layers: (a) 0+30, (b) 1+30, (c) 2+30, (d) 3+30, (e) 4+30, and (f) 5+30.