Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo Wenxing^{1, 2}, Mei Zengxia^{1, †}, Lu Yicheng³, Han Zuyin^{1, 2}, Zhu Rui^{1, 2}, Wang Tao^{1, 2}, Sui Yanxin^{1, 2}, Liang Huili¹, Du Xiaolong^{1, 4, ‡}

The dependence of total channel layer thickness on the growth time of (a) the low-R IGZO layer (with 30 min high-R IGZO layer) and (b) the high-R IGZO layer (with 4 min low-R IGZO layer).