Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

Huo Wenxing^{1, 2}, Mei Zengxia^{1, †}, Lu Yicheng³, Han Zuyin^{1, 2}, Zhu Rui^{1, 2}, Wang Tao^{1, 2}, Sui Yanxin^{1, 2}, Liang Huili¹, Du Xiaolong^{1, 4, ‡}

The threshold voltage shifts versus stress time with different growth times of (a) low-R IGZO layer and (b) high-R layer.