Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Memory windows at PMMA/toluene solution concentrations of (a) 5 mg/mL and (b) 11 mg/mL.
Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer |
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Memory windows at PMMA/toluene solution concentrations of (a) 5 mg/mL and (b) 11 mg/mL. |
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