Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Memory windows of OFET-FGM at various VP/VE voltages for 0.1 s.
Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer |
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Memory windows of OFET-FGM at various VP/VE voltages for 0.1 s. |
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