Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Zhang Wen-Ting^{1, 2}, Wang Fen-Xia¹, Li Yu-Miao¹, Guo Xiao-Xing¹, Yang Jian-Hong^{1, †}

(a) Energy level diagram of OFET-FGM without applying voltage. (b) Energy band diagrams of OFET-FGM during P/E operation. (c) Memory window of OFET-FGM, V_P/E = ±60 V, 0.1 s. (d) Memory window of control sample, V_P/E = ±60 V, 0.1 s.