Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Zhang Wen-Ting
1, 2
, Wang Fen-Xia
1
, Li Yu-Miao
1
, Guo Xiao-Xing
1
, Yang Jian-Hong
1, †
(a) Output characteristics and (b) transfer characteristics of OFET-FGM.