Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Zhang Wen-Ting1, 2, Wang Fen-Xia1, Li Yu-Miao1, Guo Xiao-Xing1, Yang Jian-Hong1, †
       

(a) Schematic diagram of device structure and (b) AFM image of poly-Si film on SiO2 surface.