Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer
Zhang Wen-Ting
1, 2
, Wang Fen-Xia
1
, Li Yu-Miao
1
, Guo Xiao-Xing
1
, Yang Jian-Hong
1, †
(a) Schematic diagram of device structure and (b) AFM image of poly-Si film on SiO
2
surface.