Electronic and optical properties of GaN–MoS<sub>2</sub> heterostructure from first-principles calculations

Electronic and optical properties of GaN–MoS₂ heterostructure from first-principles calculations

Ren Dahua^†, Tan Xingyi, Zhang Teng, Zhang Yuan

Imaginary dielectric function of the GaN–MoS₂ HS with strains ranging from −5% to 5%.