Effect of defects properties on InP-based high electron mobility transistors
The electron concentration in InP-based HEMTs with proton fluence from 1 × 1012 cm−2 to 4 × 1012 cm−2.
Effect of defects properties on InP-based high electron mobility transistors |
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The electron concentration in InP-based HEMTs with proton fluence from 1 × 1012 cm−2 to 4 × 1012 cm−2. |
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