Effect of defects properties on InP-based high electron mobility transistors
The effect of ET on output characteristics. (a) Output current at VGS=0 V; (b) drain saturation current at VDS=1.5 V.
Effect of defects properties on InP-based high electron mobility transistors |
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The effect of ET on output characteristics. (a) Output current at VGS=0 V; (b) drain saturation current at VDS=1.5 V. |
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