Effect of defects properties on InP-based high electron mobility transistors
Sun Shu-Xiang1, Chang Ming-Ming1, Li Meng-Ke1, Ma Liu-Hong1, Zhong Ying-Hui1, ‡, Li Yu-Xiao1, Ding Peng2, Jin Zhi2, Wei Zhi-Chao3
       

Schematic cross-section of the InP-based HEMT.