Modulation of magnetic and electrical properties of bilayer graphene quantum dots using rotational stacking faults
Yang Hong-Ping1, Yuan Wen-Juan2, †, Luo Jun2, Zhu Jing1, ‡
       

Distribution of the energy levels near the Fermi level of the unrelaxed models of bilayer graphene quantum dots with different RSF rotational angles. Labels A–F and AB correspond to models A–F and AB, respectively. The dashed line represents the Fermi level. The energy levels in black and red correspond to spin up and spin down, respectively.