Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method
The cross-plane thermal conductivity extracted at temperatures (a) from 300 K to 400 K, and (b) from 75 K to 285 K.
Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method |
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The cross-plane thermal conductivity extracted at temperatures (a) from 300 K to 400 K, and (b) from 75 K to 285 K. |
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