Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method
Zhang Yan-Yan1, Cheng Ran1, Ni Dong2, Tian Ming3, Lu Ji-Wu4, †, Zhao Yi1
       

The linear region in thermal resistance distribution versus pulse time in log scale. The thermal resistance increased as temperature increased. (a) The control sample without SOI, (b) the sample with SOI thickness of 30 nm, and (c) the schematic of κ Si , film extraction.