Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method
Geometrical parameter γ is related to the measurement structure, and (a) γ = 4, (b) γ = 2, (c) γ = 2, (d) γ =1 for the structures shown.
Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method |
|
Geometrical parameter γ is related to the measurement structure, and (a) γ = 4, (b) γ = 2, (c) γ = 2, (d) γ =1 for the structures shown. |
| |