Thermal conductivity characterization of ultra-thin silicon film using the ultra-fast transient hot strip method
Zhang Yan-Yan1, Cheng Ran1, Ni Dong2, Tian Ming3, Lu Ji-Wu4, †, Zhao Yi1
       

(a) The initial resistances R0 extracted from the resistance distribution varied as the pulse time increased, and R0 was calculated by averaging the resistances at the third hundred nanosecond. (b) The temperature coefficient distribution at different environment temperatures ranging from 300 K to 400 K in steps of 10 K.