Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-<inline-formula> <tex-math><?CDATA ${\rm{\mu }}{\rm{m}}$?></tex-math><mml:math> <mml:mi mathvariant="normal">μ</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:math> <inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="cpb_28_7_078104_ieqn1.gif"/> </inline-formula> quantum dot lasers

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-

μ m

quantum dot lasers

Hao Hui-Ming^{1, 2}, Su Xiang-Bin^{1, 2}, Zhang Jing¹, Ni Hai-Qiao^{1, 2, †}, Niu Zhi-Chuan^{1, 2, ‡}

RHEED images of the substrate surface: (a) the start of oxide desorption, (b) oxide desorption complete, (c) (2 × 4) reconstruction of [110] direction, and (d) (2 × 4) reconstruction of [ 1 1 ¯ 0 ] direction.