Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers
Hao Hui-Ming1, 2, Su Xiang-Bin1, 2, Zhang Jing1, Ni Hai-Qiao1, 2, †, Niu Zhi-Chuan1, 2, ‡
       

Structure for the active region of the quantum dot laser.