Annealing-enhanced interlayer coupling interaction in GaS/MoS2 heterojunctions
Power dependent PL of GaS/MoS2 heterojunctions measured at room temperature, the insert shows the dependence of the PL intensity on the excitation power.
Annealing-enhanced interlayer coupling interaction in GaS/MoS2 heterojunctions |
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Power dependent PL of GaS/MoS2 heterojunctions measured at room temperature, the insert shows the dependence of the PL intensity on the excitation power. |
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