Annealing-enhanced interlayer coupling interaction in GaS/MoS<sub>2</sub> heterojunctions

Annealing-enhanced interlayer coupling interaction in GaS/MoS₂ heterojunctions

Meng Xiuqing^†, Chen Shulin, Fang Yunzhang, Kou Jianlong

(a) The PL properties of different parts of the as-transferred heterojunctions. (b) The PL properties of different parts of the 300 °C annealed heterojunctions.