Semiconductor–metal transition in GaAs nanowires under high pressure
(a) IRR spectra of GaAs NWs up to 25.6 GPa. (b) Pressure–reflectivity diagram of two different wavenumbers (1500 cm−1 and 3000 cm−1) upon compression.
Semiconductor–metal transition in GaAs nanowires under high pressure |
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(a) IRR spectra of GaAs NWs up to 25.6 GPa. (b) Pressure–reflectivity diagram of two different wavenumbers (1500 cm−1 and 3000 cm−1) upon compression. |
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