Semiconductor–metal transition in GaAs nanowires under high pressure
Liang Yi-Lan1, Yao Zhen1, Yin Xue-Tong1, Wang Peng1, ‡, Li Li-Xia2, Pan Dong2, §, Li Hai-Yan1, Li Quan-Jun1, Liu Bing-Bing1, Zhao Jian-Hua2
       

(a) Synchrotron XRD patterns of GaAs NWs upon compression from 2.0 GPa to 26.2 GPa. Asterisks in the pattern measured at 20.0 GPa represent the diffraction peaks belonging to OR phase, ticks of OR phase are assigned at 23 GPa (Ref. [26]). (b) Synchrotron XRD patterns of GaAs NWs upon decompression from 26.2 GPa to 0.7 GPa.