Semiconductor–metal transition in GaAs nanowires under high pressure
Liang Yi-Lan1, Yao Zhen1, Yin Xue-Tong1, Wang Peng1, ‡, Li Li-Xia2, Pan Dong2, §, Li Hai-Yan1, Li Quan-Jun1, Liu Bing-Bing1, Zhao Jian-Hua2
       

(a) SEM image of GaAs NWs. (b) XRD patterns of ZB GaAs NWs at ambient pressure.