Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Wei Jia-Nan1, †, He Chao-Hui1, Li Pei1, Li Yong-Hong1, Guo Hong-Xia2
       

Electron density at 1.2 ns when the ion strikes at x = 8 μ m with (a) Φ p = 0 , (b) Φ p = 1 × 10 12 cm − 2 , (c) Φ p = 1 × 10 13 cm − 2 , and (d) Φ p = 5 × 10 13 cm − 2 .