Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor

Wei Jia-Nan^{1, †}, He Chao-Hui¹, Li Pei¹, Li Yong-Hong¹, Guo Hong-Xia²

Ion-induced (a) current transients and (b) charge collections at x = 3.17 μ m .