Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
Wei Jia-Nan
1, †
, He Chao-Hui
1
, Li Pei
1
, Li Yong-Hong
1
, Guo Hong-Xia
2
Current gain of IBM 8HP considering proton-induced alteration of minority carrier lifetime.