Effects of helium irradiation dose and temperature on the damage evolution of Ti3SiC2 ceramic
Shen Hua-Hai1, †, Xiang Xia2, Zhang Hai-Bin1, Zhou Xiao-Song1, Deng Hong-Xiang2, ‡, Zu Xiao-Tao2
       

GIXRD patterns of Ti3SiC2 specimens after He irradiation at (b) RT and (a) 500 °C with fluence increasing from 0.5 ×1017 He+/cm2 to 2.0 ×1017 He+/cm2.