Effects of helium irradiation dose and temperature on the damage evolution of Ti3SiC2 ceramic
Shen Hua-Hai1, †, Xiang Xia2, Zhang Hai-Bin1, Zhou Xiao-Song1, Deng Hong-Xiang2, ‡, Zu Xiao-Tao2
       

SRIM results of 400 keV helium irradiation on Ti3SiC2 to fluence of 0.5 ×1017 He+/cm2, 1.0 ×1017 He+/cm2, and 2.0 ×1017 He+/cm2, which induced a maximal damage of 2.4 dpa, 4.8 dpa, and 9.6 dpa at the project depth of 1330 nm, respectively.