Micron-sized diamond particles containing Ge-V and Si-V color centers
Zhang Hang-Cheng, Chen Cheng-Ke, Mei Ying-Shuang, Li Xiao, Jiang Mei-Yan, Hu Xiao-Jun
       

(a) The Ge-V (602 nm) mapping and (b) the Si-V (738 nm) mapping of diamond particle growing under the different growth pressures. (c) The frequency distribution histogram of Ge-V PL intensity. (d) Dependence of the average PL intensities of the color centers on the growth pressure.